发明申请
US20110107161A1 THRESHOLD VOLTAGE TECHNIQUES FOR DETECTING AN IMMINENT READ FAILURE IN A MEMORY ARRAY
有权
用于检测存储器阵列中的立即读取故障的阈值电压技术
- 专利标题: THRESHOLD VOLTAGE TECHNIQUES FOR DETECTING AN IMMINENT READ FAILURE IN A MEMORY ARRAY
- 专利标题(中): 用于检测存储器阵列中的立即读取故障的阈值电压技术
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申请号: US12608405申请日: 2009-10-29
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公开(公告)号: US20110107161A1公开(公告)日: 2011-05-05
- 发明人: Richard Eguchi , Thomas S. Harp , Thomas Jew , Peter J. Kuhn , Timothy J. Strauss
- 申请人: Richard Eguchi , Thomas S. Harp , Thomas Jew , Peter J. Kuhn , Timothy J. Strauss
- 申请人地址: US TX Austin
- 专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址: US TX Austin
- 主分类号: G11C29/04
- IPC分类号: G11C29/04 ; G06F11/22
摘要:
A technique for detecting an imminent read failure in a memory array includes determining whether a memory array, which does not exhibit an uncorrectable error correcting code (ECC) read during an initial array integrity check at a normal read verify voltage level, exhibits an uncorrectable ECC read during a subsequent array integrity check at a margin read verify voltage level. The technique also includes providing an indication of an imminent read failure for the memory array when the memory array exhibits an uncorrectable ECC read during the subsequent array integrity check. In this case, the margin read verify voltage level is different from the normal read verify voltage level.
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