发明申请
- 专利标题： ETCHING PROCESS FOR SEMICONDUCTORS
- 专利标题（中）： 用于半导体的蚀刻工艺
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申请号： US12917826申请日： 2010-11-02
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公开(公告)号： US20110108956A1公开(公告)日： 2011-05-12
- 发明人: Michael A. HAASE , Terry L. SMITH , Jun-Ying ZHANG
- 申请人： Michael A. HAASE , Terry L. SMITH , Jun-Ying ZHANG
- 专利权人： 3M Innovative Properties Company
- 当前专利权人： 3M Innovative Properties Company
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; C23F4/00
摘要：
A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
公开/授权文献
- US08765611B2 Etching process for semiconductors 公开/授权日：2014-07-01
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