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发明申请
US20110109344A1 Semiconductor devices having on-die termination structures for reducing current consumption and termination methods performed in the semiconductor devices 有权
具有用于降低电流消耗的片上端接结构的半导体器件和在半导体器件中执行的端接方法

Semiconductor devices having on-die termination structures for reducing current consumption and termination methods performed in the semiconductor devices
摘要：
Example embodiments disclose a semiconductor device having an on-die termination (ODT) structure that reduces current consumption, and a termination method performed in the semiconductor device. The semiconductor device includes a calibration circuit for generating calibration codes in response to a reference voltage and a voltage of a calibration terminal connected to an external resistor and an on-die termination device for controlling a termination resistance of a data input/output pad in response to the calibration codes and an on-die termination control signal. The termination resistance of the data input/output pad is greater than a resistance of the calibration terminal.
摘要（中）：

示例实施例公开了具有降低电流消耗的片上终端（ODT）结构的半导体器件以及在半导体器件中执行的终止方法。 半导体器件包括用于响应于参考电压产生校准代码的校准电路和连接到外部电阻器的校准端子的电压和用于响应于控制数据输入/输出焊盘的端接电阻的片上终端器件 校准代码和片上终止控制信号。 数据输入/输出焊盘的端接电阻大于校准端子的电阻。

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