发明申请
US20110111604A1 PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY
审中-公开
等离子体表面处理，以防止浸渍图中的图案褶皱
- 专利标题： PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY
- 专利标题（中）： 等离子体表面处理，以防止浸渍图中的图案褶皱
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申请号： US13007963申请日： 2011-01-17
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公开(公告)号： US20110111604A1公开(公告)日： 2011-05-12
- 发明人: Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
- 申请人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.