发明申请
US20110114937A1 p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE
失效
p型MgZnO基薄膜和半导体发光器件
- 专利标题： p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE
- 专利标题（中）： p型MgZnO基薄膜和半导体发光器件
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申请号： US12672444申请日： 2008-08-01
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公开(公告)号： US20110114937A1公开(公告)日： 2011-05-19
- 发明人: Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
- 申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
- 申请人地址： JP Kyoto-fu
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto-fu
- 国际申请： PCT/JP2008/063879 WO 20080801
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film.A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0≦X
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