发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体存储器件
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申请号： US12948302申请日： 2010-11-17
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公开(公告)号： US20110116334A1公开(公告)日： 2011-05-19
- 发明人: Je-min YU , Byung-chul Kim , Jun-hyung Kim , Sang-joon Hwang
- 申请人： Je-min YU , Byung-chul Kim , Jun-hyung Kim , Sang-joon Hwang
- 优先权： KR10-2009-0111543 20091118
- 主分类号： G11C7/12
- IPC分类号： G11C7/12 ; G11C7/08
摘要：
A semiconductor memory device includes a bitline sensing amp detecting and amplifying data of a pair of bitlines from a memory cell, a column selecting unit transmitting the data of the pair of bitlines to a pair of local datalines in response to a column selecting signal, a dataline precharging unit precharging the pair of local datalines to a precharging voltage level in response to a precharging signal, and a dataline sensing amp detecting and amplifying data transmitted to the pair of local datalines. The dataline sensing amp includes a charge sync unit discharging the pair of local datalines at the precharging voltage level in response to a first dataline sensing enabling signal and data of the pair of local datalines, and a data sensing unit transmitting data of the pair of local datalines to a pair of global datalines in response to a second dataline sensing enabling signal.
公开/授权文献
- US08339883B2 Semiconductor memory device 公开/授权日：2012-12-25