发明申请
US20110120864A1 CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP AND CELLULAR ELECTROPHYSIOLOGY SENSOR USING THE CHIP, AND METHOD OF MANUFACTURING CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP 审中-公开
使用芯片的细胞电生理学传感器芯片和细胞电生理学传感器以及制造细胞电生理学传感器芯片的方法

  • 专利标题: CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP AND CELLULAR ELECTROPHYSIOLOGY SENSOR USING THE CHIP, AND METHOD OF MANUFACTURING CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP
  • 专利标题(中): 使用芯片的细胞电生理学传感器芯片和细胞电生理学传感器以及制造细胞电生理学传感器芯片的方法
  • 申请号: US12677977
    申请日: 2009-07-22
  • 公开(公告)号: US20110120864A1
    公开(公告)日: 2011-05-26
  • 发明人: Makoto TakahashiMasaya NakataniHiroshi UshioTakeki Yamamoto
  • 申请人: Makoto TakahashiMasaya NakataniHiroshi UshioTakeki Yamamoto
  • 优先权: JP2008-200775 20080804
  • 国际申请: PCT/JP2009/003423 WO 20090722
  • 主分类号: G01N33/487
  • IPC分类号: G01N33/487 B32B37/00
CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP AND CELLULAR ELECTROPHYSIOLOGY SENSOR USING THE CHIP, AND METHOD OF MANUFACTURING CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP
摘要:
A cellular electrophysiology sensor is adapted to measure an electrical change of a test cell. A chip for the sensor includes a diaphragm, and a thermally-oxidized film mainly containing silicon dioxide on the diaphragm. The diaphragm includes a silicon layer and a silicon dioxide layer on an upper surface of the silicon layer. A through-hole passing through the silicon layer and the silicon dioxide layer is formed. The through-hole has an opening which opens at the silicon dioxide layer and is adapted to capture the test cell. The thermally-oxidized film is provided on an inner wall surface of the through-hole, and unified with the silicon dioxide layer at the opening of the through-hole. This cellular electrophysiology sensor chip can stably capture the test cell and provides a gigaseal stably even if test cells have different properties,
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