发明申请
US20110121266A1 QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
有权
具有由金属源/排水源引起的不均匀应变的QUANTUM WELL MOSFET通道，以及合适的反应源/漏极
- 专利标题： QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
- 专利标题（中）： 具有由金属源/排水源引起的不均匀应变的QUANTUM WELL MOSFET通道，以及合适的反应源/漏极
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申请号： US13017862申请日： 2011-01-31
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公开(公告)号： US20110121266A1公开(公告)日： 2011-05-26
- 发明人: Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- 申请人： Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/20
摘要：
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
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