- 专利标题: Semiconductor Device and Manufacturing Method Thereof
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申请号: US13011128申请日: 2011-01-21
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公开(公告)号: US20110121290A1公开(公告)日: 2011-05-26
- 发明人: Kengo Akimoto , Tatsuya Honda , Norihito Sone
- 申请人: Kengo Akimoto , Tatsuya Honda , Norihito Sone
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2005-283782 20050929
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.