发明申请
- 专利标题： Method for Producing a Doped Organic Semiconducting Layer
- 专利标题（中）： 产生掺杂有机半导体层的方法
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申请号： US12919989申请日： 2009-02-25
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公开(公告)号： US20110124141A1公开(公告)日： 2011-05-26
- 发明人: Britta Goeoetz , Thomas Dobbertin , Karsten Diekmann , Andreas Kanitz , Guenter Schmid , Arvid Hunze
- 申请人： Britta Goeoetz , Thomas Dobbertin , Karsten Diekmann , Andreas Kanitz , Guenter Schmid , Arvid Hunze
- 申请人地址： DE Regensburg
- 专利权人： OSRAM Opto Semiconductors Gmbh
- 当前专利权人： OSRAM Opto Semiconductors Gmbh
- 当前专利权人地址： DE Regensburg
- 优先权： DE102008011185.6 20080227
- 国际申请： PCT/DE09/00280 WO 20090225
- 主分类号： H01L51/56
- IPC分类号： H01L51/56 ; H01L51/50
摘要：
A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.
公开/授权文献
- US08841153B2 Method for producing a doped organic semiconducting layer 公开/授权日：2014-09-23