发明申请
US20110127471A1 DOPED GRAPHENE, METHOD OF MANUFACTURING THE DOPED GRAPHENE, AND A DEVICE INCLUDING THE DOPED GRAPHENE
有权
DOPED GRAPHENE，制造DOPED GRAPHENE的方法和包括DOPED GRAPHENE的装置
- 专利标题： DOPED GRAPHENE, METHOD OF MANUFACTURING THE DOPED GRAPHENE, AND A DEVICE INCLUDING THE DOPED GRAPHENE
- 专利标题（中）： DOPED GRAPHENE，制造DOPED GRAPHENE的方法和包括DOPED GRAPHENE的装置
-
申请号： US12847389申请日： 2010-07-30
-
公开(公告)号： US20110127471A1公开(公告)日： 2011-06-02
- 发明人: Hyeon-jin SHIN , Won-mook CHOI , Jae-young CHOI , Seon-mi YOON
- 申请人： Hyeon-jin SHIN , Won-mook CHOI , Jae-young CHOI , Seon-mi YOON
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2009-0118450 20091202
- 主分类号： H01B1/02
- IPC分类号： H01B1/02 ; H01B1/04 ; H01B1/12
摘要：
A composition including graphene; and a dopant selected from the group consisting of an organic dopant, an inorganic dopant, and a combination including at least one of the foregoing.