发明申请
- 专利标题: HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS
- 专利标题(中): 电子元件,光电或光伏组件的结构
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申请号: US12956675申请日: 2010-11-30
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公开(公告)号: US20110127581A1公开(公告)日: 2011-06-02
- 发明人: Jean-Marc Bethoux , Fabrice Letertre , Chris Werkhoven , Ionut Radu , Oleg Kononchuk
- 申请人: Jean-Marc Bethoux , Fabrice Letertre , Chris Werkhoven , Ionut Radu , Oleg Kononchuk
- 优先权: FRFR0958547 20091201
- 主分类号: H01L29/205
- IPC分类号: H01L29/205 ; C23C16/02 ; B32B9/00 ; B32B37/00 ; C30B23/02
摘要:
The present invention relates to a support for the epitaxy of a layer of a material of composition AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and x+y≦1, having successively from its base to its surface; a support substrate, a bonding layer, a monocrystalline seed layer for the epitaxial growth of the layer of material AlxInyGa(1-x-y)N. The support substrate is made of a material that presents an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1. The seed layer is in a material of the composition AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and x+y≦1. The seed and bonding layers provide a specific contact resistance that is less than or equal to 0.1 ohm·cm−2, and the materials of the support substrate, the bonding layer and the seed layer are refractory at a temperature of greater than 750° C. or even greater than 1000° C. The invention also relates to methods for manufacturing the support.