发明申请
US20110127614A1 REDUCING THE SERIES RESISTANCE IN SOPHISTICATED TRANSISTORS BY EMBEDDING METAL SILICIDE CONTACT REGIONS RELIABLY INTO HIGHLY DOPED SEMICONDUCTOR MATERIAL
审中-公开
通过将金属硅化物接触区域可靠地嵌入到高分子半导体材料中，减少了SOPHISTICATED TRANSISTORS中的串联电阻
- 专利标题： REDUCING THE SERIES RESISTANCE IN SOPHISTICATED TRANSISTORS BY EMBEDDING METAL SILICIDE CONTACT REGIONS RELIABLY INTO HIGHLY DOPED SEMICONDUCTOR MATERIAL
- 专利标题（中）： 通过将金属硅化物接触区域可靠地嵌入到高分子半导体材料中，减少了SOPHISTICATED TRANSISTORS中的串联电阻
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申请号： US12905545申请日： 2010-10-15
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公开(公告)号： US20110127614A1公开(公告)日： 2011-06-02
- 发明人: Thilo Scheiper , Sven Beyer , Jan Hoentschel , Uwe Griebenow
- 申请人： Thilo Scheiper , Sven Beyer , Jan Hoentschel , Uwe Griebenow
- 优先权： DE10200947308.4 20091130
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/336 ; H01L21/8238
摘要：
In sophisticated transistor elements, an additional silicon-containing semiconductor material may be provided after forming the drain and source extension regions, thereby reducing the probability of forming metal silicide regions, such as nickel silicide regions, which may extend into the channel region, thereby causing a significant increase in series resistance. Consequently, an increased degree of flexibility in adjusting the overall transistor characteristics may be achieved, for instance, by selecting a reduced spacer width and the like.
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