发明申请
US20110128063A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
半导体集成电路

  • 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT
  • 专利标题(中): 半导体集成电路
  • 申请号: US12884533
    申请日: 2010-09-17
  • 公开(公告)号: US20110128063A1
    公开(公告)日: 2011-06-02
  • 发明人: Ryo FukudaMasaru Koyanagi
  • 申请人: Ryo FukudaMasaru Koyanagi
  • 优先权: JP2009-273787 20091201
  • 主分类号: H03L5/00
  • IPC分类号: H03L5/00
SEMICONDUCTOR INTEGRATED CIRCUIT
摘要:
According to one embodiment, a semiconductor integrated circuit includes first and second level shift circuits. The first level shifter includes a plurality of transistors and is connected to a power source voltage supply node of a first power source system and to which a first signal of a second power source system and a level inversion signal of the first signal are input. The second level shifter includes a plurality of transistors and is connected to the power source voltage supply node of the first power source system and to which the level inversion signal of the first signal of the second power source system and an output signal of the first level shifter are input. The first and second level shifters have substantially the same circuit configuration and driving abilities of corresponding ones of the transistors in the first and second level shifters are substantially set equal.
公开/授权文献
信息查询
0/0