An image sensor includes a plurality of color sensors, a plurality of depth sensors, a near-infrared cut filter, a color filter, a pass filter and a rejection filter. The color sensors and depth sensors are formed on a substrate. The near-infrared cut filter and the color filter are formed on the color sensors. The pass filter is formed on the depth sensors, and is adapted to transmit light having a wavelength longer than an upper limit of a visible light wavelength. The pass filter has a multi-layer structure wherein a semiconductor material and a semiconductor oxide material are alternately stacked. The rejection filter is formed over the near-infrared cut filter, the color filter and the pass filter, and is adapted to transmit light having a wavelength shorter than an upper limit of a near-infrared light wavelength.