发明申请
- 专利标题： RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 电阻记忆体装置及其制造方法
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申请号： US12835265申请日： 2010-07-13
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公开(公告)号： US20110133152A1公开(公告)日： 2011-06-09
- 发明人: Sung-Yool CHOI
- 申请人： Sung-Yool CHOI
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2009-0119772 20091204
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02
摘要：
A resistive memory device is provided. The resistive memory device includes a bottom electrode, a resistance-variable layer, and a top electrode. The resistance-variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance-variable layer. The resistance-variable layer includes a conductive polymer layer that reacts with the top electrode to form an oxide layer.
公开/授权文献
- US08203140B2 Resistive memory device and method for fabricating the same 公开/授权日：2012-06-19
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