发明申请
US20110133194A1 PIXEL STRUCTURE 有权
像素结构

  • 专利标题: PIXEL STRUCTURE
  • 专利标题(中): 像素结构
  • 申请号: US12868745
    申请日: 2010-08-26
  • 公开(公告)号: US20110133194A1
    公开(公告)日: 2011-06-09
  • 发明人: Chih-Chung LiuXiYao Li
  • 申请人: Chih-Chung LiuXiYao Li
  • 优先权: CN200910253586.1 20091203
  • 主分类号: H01L33/00
  • IPC分类号: H01L33/00
PIXEL STRUCTURE
摘要:
A pixel structure includes a scan line, a data line, a gate electrode electrically connected to the scan line, a semiconductor layer disposed on the gate electrode, a drain electrode, an extending electrode, and a pixel electrode. The scan line and the data line cross each other, and are insulated. The drain electrode includes a contact part disposed outside the gate electrode, an electrode part disposed on the semiconductor pattern and a connecting part extending from the contact part along a direction to connect the electrode part, and partially overlapping the gate electrode. The pixel electrode is connected to the contact part. The extending electrode is connected to the scan line. A first end of the extending electrode points to the semiconductor layer along the direction, and overlaps the drain electrode. A first width of the connecting part is equal to the second width of the extending electrode.
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