发明申请
- 专利标题: METHOD OF EXOCASTING AN ARTICLE OF SEMICONDUCTING MATERIAL
- 专利标题(中): 出售半导体材料的方法
-
申请号: US12631054申请日: 2009-12-04
-
公开(公告)号: US20110135902A1公开(公告)日: 2011-06-09
- 发明人: Prantik Mazumder , Balram Suman
- 申请人: Prantik Mazumder , Balram Suman
- 主分类号: B28B1/30
- IPC分类号: B28B1/30
摘要:
A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.
公开/授权文献
- US08591795B2 Method of exocasting an article of semiconducting material 公开/授权日:2013-11-26