发明申请
- 专利标题: NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF
- 专利标题(中): 氮化物半导体发光器件及其制造方法
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申请号: US12979059申请日: 2010-12-27
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公开(公告)号: US20110136276A1公开(公告)日: 2011-06-09
- 发明人: Takeshi KAMIKAWA , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
- 申请人: Takeshi KAMIKAWA , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
- 申请人地址: JP Osaka-shi
- 专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人地址: JP Osaka-shi
- 优先权: JP2003-204262 20030731; JP2004-183163 20040622
- 主分类号: H01L21/306
- IPC分类号: H01L21/306
摘要:
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.