发明申请
- 专利标题: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US12766953申请日: 2010-04-26
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公开(公告)号: US20110136296A1公开(公告)日: 2011-06-09
- 发明人: Jae Bon Koo , Seung Youl Kang , In-Kyu You
- 申请人: Jae Bon Koo , Seung Youl Kang , In-Kyu You
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2009-0120620 20091207
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/50
摘要:
Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
公开/授权文献
- US08198148B2 Method for manufacturing semiconductor device 公开/授权日:2012-06-12