发明申请
- 专利标题： MONOLITHIC MICROWAVE INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME
- 专利标题（中）： 单片微波集成电路装置及其形成方法
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申请号： US12832432申请日： 2010-07-08
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公开(公告)号： US20110140175A1公开(公告)日： 2011-06-16
- 发明人: Byoung-Gue MIN , Jongmin Lee , Seong-ll Kim , Hyung Sup Yoon
- 申请人： Byoung-Gue MIN , Jongmin Lee , Seong-ll Kim , Hyung Sup Yoon
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2009-0123338 20091211
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8222
摘要：
Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.
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