发明申请
- 专利标题： DELTA-DOPING AT WAFER LEVEL FOR HIGH THROUGHPUT, HIGH YIELD FABRICATION OF SILICON IMAGING ARRAYS
- 专利标题（中）： 用于高速穿透的三角形抛光，硅成像阵列的高效制造
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申请号： US12965790申请日： 2010-12-10
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公开(公告)号： US20110140246A1公开(公告)日： 2011-06-16
- 发明人: Michael E. Hoenk , Shouleh Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
- 申请人： Michael E. Hoenk , Shouleh Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
- 申请人地址： US CA Pasadena
- 专利权人： California Institute of Technology
- 当前专利权人： California Institute of Technology
- 当前专利权人地址： US CA Pasadena
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/30 ; C23C16/02
摘要：
Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
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