发明申请
- 专利标题： ION BEAM DEVICE
- 专利标题（中）： 离子束装置
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申请号： US12995700申请日： 2009-03-30
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公开(公告)号： US20110147609A1公开(公告)日： 2011-06-23
- 发明人: Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
- 申请人： Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
- 申请人地址： JP Tokyo
- 专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-148392 20080605
- 国际申请： PCT/JP2009/056485 WO 20090330
- 主分类号： H01J3/04
- IPC分类号： H01J3/04
摘要：
An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.
公开/授权文献
- US08779380B2 Ion beam device 公开/授权日：2014-07-15
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