发明申请
US20110147827A1 Flash memory with partially removed blocking dielectric in the wordline direction
审中-公开
在字线方向上部分去除阻塞电介质的闪存
- 专利标题： Flash memory with partially removed blocking dielectric in the wordline direction
- 专利标题（中）： 在字线方向上部分去除阻塞电介质的闪存
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申请号： US12655090申请日： 2009-12-23
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公开(公告)号： US20110147827A1公开(公告)日： 2011-06-23
- 发明人: Fatma Arzum Simsek-Ege , Sanh Tang , Nirmal Ramaswamy , Thomas M. Graettinger , Kyu S. Min , Tejas Krishnamohan , Srivardhan Gowda
- 申请人： Fatma Arzum Simsek-Ege , Sanh Tang , Nirmal Ramaswamy , Thomas M. Graettinger , Kyu S. Min , Tejas Krishnamohan , Srivardhan Gowda
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
The present disclosure relates generally to the fabrication of non-volatile memory. In at least one embodiment, the present disclosure relates to forming a layered blocking dielectric which has a portion thereof removed in the wordline direction.
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