发明申请
- 专利标题： Multiple transistor fin heights
- 专利标题（中）： 多晶体管翅片高度
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申请号： US12655085申请日： 2009-12-23
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公开(公告)号： US20110147848A1公开(公告)日： 2011-06-23
- 发明人: Kelin J. Kuhn , Tahir Ghani , Justin S. Sandford
- 申请人： Kelin J. Kuhn , Tahir Ghani , Justin S. Sandford
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/762
摘要：
The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming transistor fins of differing heights to obtain a performance improvement for a given type of integrated circuit within the microelectronic device.
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