发明申请
US20110149661A1 MEMORY ARRAY HAVING EXTENDED WRITE OPERATION 审中-公开
具有扩展写入操作的记忆阵列

MEMORY ARRAY HAVING EXTENDED WRITE OPERATION
摘要:
In some embodiments, an apparatus comprising a memory array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns and configured to receive a clock signal having a plurality of clock cycles; a plurality of word-lines associated with the plurality of rows of the SRAM cells; and a selected word-line driver configured during an extended write operation to drive a selected one of the plurality of word-lines with a write word-line signal having an extended duration. Other embodiments may be described and claimed.
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