发明申请
- 专利标题: MEMORY ARRAY HAVING EXTENDED WRITE OPERATION
- 专利标题(中): 具有扩展写入操作的记忆阵列
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申请号: US12642444申请日: 2009-12-18
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公开(公告)号: US20110149661A1公开(公告)日: 2011-06-23
- 发明人: Iqbal R. Rajwani , Satish K. Damaraju , Niranjan L. Cooray , Muhammad M. Khellah , Jaydeep P. Kulkarni
- 申请人: Iqbal R. Rajwani , Satish K. Damaraju , Niranjan L. Cooray , Muhammad M. Khellah , Jaydeep P. Kulkarni
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C8/08 ; G11C8/18
摘要:
In some embodiments, an apparatus comprising a memory array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns and configured to receive a clock signal having a plurality of clock cycles; a plurality of word-lines associated with the plurality of rows of the SRAM cells; and a selected word-line driver configured during an extended write operation to drive a selected one of the plurality of word-lines with a write word-line signal having an extended duration. Other embodiments may be described and claimed.