发明申请
- 专利标题: METHODS FOR DEPOSITING HIGH-K DIELECTRICS
- 专利标题(中): 沉积高K电介质的方法
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申请号: US13039819申请日: 2011-03-03
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公开(公告)号: US20110151136A1公开(公告)日: 2011-06-23
- 发明人: Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
- 申请人: Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
- 主分类号: B05D3/06
- IPC分类号: B05D3/06 ; B05D3/02 ; B05D5/12
摘要:
Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.
公开/授权文献
- US08574985B2 Methods for depositing high-K dielectrics 公开/授权日:2013-11-05