发明申请
US20110153914A1 REPURPOSING NAND READY/BUSY PIN AS COMPLETION INTERRUPT
有权
将NAND READY / BUSY PIN作为完成中断
- 专利标题： REPURPOSING NAND READY/BUSY PIN AS COMPLETION INTERRUPT
- 专利标题（中）： 将NAND READY / BUSY PIN作为完成中断
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申请号： US12643131申请日： 2009-12-21
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公开(公告)号： US20110153914A1公开(公告)日： 2011-06-23
- 发明人: Amber D. Huffman , Suryaprasad Kareenahalli , Robert J. Royer, JR. , Chai Huat Gan
- 申请人： Amber D. Huffman , Suryaprasad Kareenahalli , Robert J. Royer, JR. , Chai Huat Gan
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F12/02
摘要：
A system and method of controlling a flash memory device such as a NAND memory device may involve receiving a command to execute an operation. A Ready/Busy contact of the memory device may be pulsed low in response to determining that execution of the operation has completed.
公开/授权文献
- US08560764B2 Repurposing NAND ready/busy pin as completion interrupt 公开/授权日：2013-10-15
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