发明申请
- 专利标题： PLASMA REACTOR AND ETCHING METHOD USING THE SAME
- 专利标题（中）： 等离子体反应器和使用它的蚀刻方法
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申请号： US12949139申请日： 2010-11-18
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公开(公告)号： US20110155694A1公开(公告)日： 2011-06-30
- 发明人: Hyeokjin JANG , Minshik KIM , Kwangmin LEE , Sungyong KO , Hwankook CHAE , Kunjoo PARK , Keehyun KIM , Weonmook LEE
- 申请人： Hyeokjin JANG , Minshik KIM , Kwangmin LEE , Sungyong KO , Hwankook CHAE , Kunjoo PARK , Keehyun KIM , Weonmook LEE
- 优先权： KR10-2009-0130381 20091224
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.
公开/授权文献
- US08323522B2 Plasma reactor and etching method using the same 公开/授权日：2012-12-04
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