Invention Application
US20110155985A1 PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE 审中-公开
相变结构和相变记忆装置

PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE
Abstract:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
Information query
Patent Agency Ranking
0/0