Invention Application
- Patent Title: PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE
- Patent Title (中): 相变结构和相变记忆装置
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Application No.: US12979895Application Date: 2010-12-28
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Publication No.: US20110155985A1Publication Date: 2011-06-30
- Inventor: Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
- Applicant: Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR10-2009-0132290 20091229; KR10-2010-0125403 20101209
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
Information query
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