发明申请
- 专利标题： SEMICONDUCTOR ELEMENT
- 专利标题（中）： 半导体元件
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申请号： US12981767申请日： 2010-12-30
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公开(公告)号： US20110156075A1公开(公告)日： 2011-06-30
- 发明人: Kuan-Yu Chou , Yung-Chih Chen
- 申请人： Kuan-Yu Chou , Yung-Chih Chen
- 优先权： TW098146162 20091230
- 主分类号： H01L33/02
- IPC分类号： H01L33/02
摘要：
A semiconductor element according to an embodiment of present application includes a first voltage drop portion providing a first voltage drop, a second voltage drop portion providing a second voltage drop, and a connecting material between the first voltage drop portion and the second voltage drop portion and having a physical dimension smaller than that of at least one of the first voltage drop portion and the second voltage drop portion. The semiconductor element can operate under a total bias voltage. The total bias voltage is greater than the second voltage drop, while the second voltage drop is greater than or equal to the first voltage drop.
公开/授权文献
- US08354683B2 Semiconductor element 公开/授权日：2013-01-15
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