发明申请
- 专利标题： Semiconductor Component with an Emitter Control Electrode
- 专利标题（中）： 具有发射极控制电极的半导体元件
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申请号： US12977755申请日： 2010-12-23
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公开(公告)号： US20110156095A1公开(公告)日： 2011-06-30
- 发明人: Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
- 申请人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102009055328.2 20091228
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.
公开/授权文献
- US09553178B2 Semiconductor component with an emitter control electrode 公开/授权日：2017-01-24
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