发明申请
- 专利标题: Gate Conductor Structure
- 专利标题(中): 门导体结构
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申请号: US13010009申请日: 2011-01-20
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公开(公告)号: US20110156282A1公开(公告)日: 2011-06-30
- 发明人: Wai-Kin Li , Haining Yang
- 申请人: Wai-Kin Li , Haining Yang
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L29/423
- IPC分类号: H01L29/423
摘要:
A gate conductor structure is provided having a barrier region between a N-type device and a P-type device, wherein the barrier region minimizes or eliminates cross-diffusion of dopant species across the barrier region. The barrier region comprises at least one sublithographic gap in the gate conductor structure. The sublithographic gap is formed by using self-assembling copolymers to form a sublithographic patterned mask over the gate conductor structure. According to one embodiment, at least one sublithographic gap is a slit or line that traverses the width of the gate conductor structure. The sublithographic gap is sufficiently deep to minimize or prevent cross-diffusion of the implanted dopant from the upper portion of the gate conductor. According to another embodiment, the sublithographic gaps are of sufficient density that cross-diffusion of dopants is reduced or eliminated during an activation anneal such that changes in Vt are minimized.
公开/授权文献
- US08476674B2 Gate conductor with a diffusion barrier 公开/授权日:2013-07-02