- 专利标题： Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing
-
申请号： US13046632申请日： 2011-03-11
-
公开(公告)号： US20110159614A1公开(公告)日： 2011-06-30
- 发明人: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- 申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- 申请人地址： TW Hsinchu
- 专利权人： LEXTAR ELECTRONICS CORP.
- 当前专利权人： LEXTAR ELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 优先权： TW97127462 20080718
- 主分类号： H01L33/48
- IPC分类号： H01L33/48
摘要：
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
公开/授权文献
信息查询
IPC分类:
