发明申请
- 专利标题： METHODS OF FORMING A MEMORY ARRAY WITH A PAIR OF MEMORY-CELL STRINGS TO A SINGLE CONDUCTIVE PILLAR
- 专利标题（中）： 形成记忆体阵列与存储单元对相对单个导电柱的方法
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申请号： US13047215申请日： 2011-03-14
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公开(公告)号： US20110159645A1公开(公告)日： 2011-06-30
- 发明人: Theodore T. Pekny
- 申请人： Theodore T. Pekny
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239
摘要：
A method of forming a memory array includes forming first and second strings of serially-coupled memory cells respectively on first and second sides of a conductive pillar. Forming the first string of memory cells includes forming a first control gate on the first side of the conductive pillar and interposing a first charge trap between the first side of the conductive pillar and the first control gate. Forming the second string of memory cells comprises forming a second control gate on the second side of the conductive pillar and interposing a second charge trap between the second side of the conductive pillar and the second control gate. The first and second charge traps are electrically isolated from each other, and the first and second control gates are electrically isolated from each other.
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