发明申请
- 专利标题： ENHANCED INTEGRITY OF A HIGH-K METAL GATE ELECTRODE STRUCTURE BY USING A SACRIFICIAL SPACER FOR CAP REMOVAL
- 专利标题（中）： 通过使用真空间隔器去除高K金属电极结构的增强的完整性
-
申请号： US12907675申请日： 2010-10-19
-
公开(公告)号： US20110159657A1公开(公告)日： 2011-06-30
- 发明人: Uwe Griebenow , Jan Hoentschel , Thilo Scheiper , Andy Wei
- 申请人： Uwe Griebenow , Jan Hoentschel , Thilo Scheiper , Andy Wei
- 优先权： DE102009055438.6 20091231
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
In a process strategy for forming sophisticated high-k metal gate electrode structures in an early manufacturing phase, the dielectric cap material may be removed on the basis of a protective spacer element, thereby ensuring integrity of a silicon nitride sidewall spacer structure, which may preserve integrity of sensitive gate materials and may also determine the lateral offset of a strain-inducing semiconductor material.
公开/授权文献
信息查询
IPC分类:
