发明申请
US20110159669A1 METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION
审中-公开
通过化学蒸气沉积沉积非晶硅薄膜的方法
- 专利标题: METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION
- 专利标题(中): 通过化学蒸气沉积沉积非晶硅薄膜的方法
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申请号: US13058047申请日: 2009-09-18
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公开(公告)号: US20110159669A1公开(公告)日: 2011-06-30
- 发明人: Woo Seok Yang , Seong mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
- 申请人: Woo Seok Yang , Seong mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2008-0092080 20080919
- 国际申请: PCT/KR2009/005313 WO 20090918
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.