Invention Application
- Patent Title: Photoresist Processing Methods
- Patent Title (中): 光刻胶加工方法
-
Application No.: US11510010Application Date: 2006-08-24
-
Publication No.: US20110159698A2Publication Date: 2011-06-30
- Inventor: Kevin Torek , Todd Abbott , Sandra Tagg , Amy Weatherly
- Applicant: Kevin Torek , Todd Abbott , Sandra Tagg , Amy Weatherly
- Applicant Address: US ID Boise 83716
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise 83716
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
Public/Granted literature
- US07977037B2 Photoresist processing methods Public/Granted day:2011-07-12
Information query
IPC分类:
