发明申请
- 专利标题: Chalcogenide Nanoionic-Based Radio Frequency Switch
- 专利标题(中): 基于硫族元素的纳米级无线电频率开关
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申请号: US13050229申请日: 2011-03-17
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公开(公告)号: US20110162950A1公开(公告)日: 2011-07-07
- 发明人: James Nessel , Richard Lee
- 申请人: James Nessel , Richard Lee
- 主分类号: H03K17/51
- IPC分类号: H03K17/51
摘要:
A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.
公开/授权文献
- US08410469B2 Chalcogenide nanoionic-based radio frequency switch 公开/授权日:2013-04-02
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