发明申请
US20110163382A1 BODY CONTACTED TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE
有权
具有降低PARASITIC电容的身体接触晶体管
- 专利标题： BODY CONTACTED TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE
- 专利标题（中）： 具有降低PARASITIC电容的身体接触晶体管
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申请号： US12652364申请日： 2010-01-05
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公开(公告)号： US20110163382A1公开(公告)日： 2011-07-07
- 发明人: Antonio L. P. Rotondaro
- 申请人： Antonio L. P. Rotondaro
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/86
摘要：
A body contacted semiconductor-on-insulator (SOI) metal gate containing transistor that has a reduced parasitic gate capacitance is provided in which a metal portion of a gate stack is removed over the body contact region and a silicon-containing material is formed that contacts the gate dielectric in the body contact region of an SOI substrate. This causes an increase of the effective gate dielectric thickness on the body contact region by greater than 5 angstroms (Å). This results in a lower parasitic capacitance at the body contact region.
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