发明申请
US20110163446A1 METHOD TO GENERATE AIRGAPS WITH A TEMPLATE FIRST SCHEME AND A SELF ALIGNED BLOCKOUT MASK AND STRUCTURE
审中-公开
使用模板第一方案生成空气放大器的方法和自对准的阻塞屏蔽和结构
- 专利标题： METHOD TO GENERATE AIRGAPS WITH A TEMPLATE FIRST SCHEME AND A SELF ALIGNED BLOCKOUT MASK AND STRUCTURE
- 专利标题（中）： 使用模板第一方案生成空气放大器的方法和自对准的阻塞屏蔽和结构
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申请号： US12983885申请日： 2011-01-04
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公开(公告)号： US20110163446A1公开(公告)日： 2011-07-07
- 发明人: Satyanarayana Venkata Nitta , Sampath PURUSHOTHAMAN , Matthew E. Colburn , Daniel C. Edelstein , Shom Ponoth
- 申请人： Satyanarayana Venkata Nitta , Sampath PURUSHOTHAMAN , Matthew E. Colburn , Daniel C. Edelstein , Shom Ponoth
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A structure and method to produce an airgap on a substrate having a dielectric layer and copper interconnects with sublithographic perforations therein which are ordered throughout the wafer structure in a macro level and a micro level with no change in order orientation and the top layer of the copper interconnects are not exposed.
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