发明申请
US20110168565A1 TIN AND TIN-ZINC PLATED SUBSTRATES TO IMPROVE NI-ZN CELL PERFORMANCE
有权
TIN和TIN-ZINC镀层基体,以提高NI-ZN电池性能
- 专利标题: TIN AND TIN-ZINC PLATED SUBSTRATES TO IMPROVE NI-ZN CELL PERFORMANCE
- 专利标题(中): TIN和TIN-ZINC镀层基体,以提高NI-ZN电池性能
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申请号: US13069879申请日: 2011-03-23
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公开(公告)号: US20110168565A1公开(公告)日: 2011-07-14
- 发明人: Feng Feng , Jeffrey Phillips , Sam Mohanta , Jeff Barton , Zeiad M. Muntasser
- 申请人: Feng Feng , Jeffrey Phillips , Sam Mohanta , Jeff Barton , Zeiad M. Muntasser
- 申请人地址: US CA San Diego
- 专利权人: POWERGENIX SYSTEMS, INC.
- 当前专利权人: POWERGENIX SYSTEMS, INC.
- 当前专利权人地址: US CA San Diego
- 主分类号: C23C28/00
- IPC分类号: C23C28/00
摘要:
An improved Ni—Zn cell with a negative electrode substrate plated with tin or tin and zinc during manufacturing has a reduced gassing rate. The copper or brass substrate is electrolytic cleaned, activated, electroplated with a matte surface to a defined thickness range, pasted with zinc oxide electrochemically active material, and baked. The defined plating thickness range of 40-80 μIn maximizes formation of an intermetallic compound Cu3Sn that helps to suppress the copper diffusion from under plating layer to the surface and eliminates formation of an intermetallic compound Cu6Sn5 during baking to provide adequate corrosion resistance during battery operation.
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