发明申请
US20110169064A1 READ TRANSISTOR FOR SINGLE POLY NON-VOLATILE MEMORY USING BODY CONTACTED SOI DEVICE
失效
使用身体接触式SOI器件的单个非易失性存储器的读取晶体管
- 专利标题: READ TRANSISTOR FOR SINGLE POLY NON-VOLATILE MEMORY USING BODY CONTACTED SOI DEVICE
- 专利标题(中): 使用身体接触式SOI器件的单个非易失性存储器的读取晶体管
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申请号: US12685335申请日: 2010-01-11
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公开(公告)号: US20110169064A1公开(公告)日: 2011-07-14
- 发明人: Anthony I. Chou , Arvind Kumar
- 申请人: Anthony I. Chou , Arvind Kumar
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L21/84
摘要:
A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET.