发明申请
- 专利标题： POWER MOSFET AND METHOD OF FORMING THE SAME
- 专利标题（中）： 功率MOSFET及其形成方法
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申请号： US12685644申请日： 2010-01-11
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公开(公告)号： US20110169076A1公开(公告)日： 2011-07-14
- 发明人: Yi-Chi Chang , Chia-Lien Wu
- 申请人： Yi-Chi Chang , Chia-Lien Wu
- 申请人地址： TW Hsinchu County
- 专利权人： EXCELLIANCE MOS CORPORATION
- 当前专利权人： EXCELLIANCE MOS CORPORATION
- 当前专利权人地址： TW Hsinchu County
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A power MOSFET is described. A trench is in a body layer and an epitaxial layer. An isolation structure is on the substrate at one side of the trench. An oxide layer is on the surface of the trench. A first conductive layer fills the trench and extends to the isolation structure. A dielectric layer is on the first conductive layer and isolation structure and has an opening exposing the first conductive layer. At least one source region is in the body layer at the other side of the trench. A second conductive layer is on the dielectric layer and electrically connected to the source region while electrically isolated from the first conductive layer by the dielectric layer. A third conductive layer is on the dielectric layer and electrically connected to the first conductive layer through the opening of the dielectric layer. The second and third conductive layers are separated.
公开/授权文献
- US08227858B2 Power MOSFET 公开/授权日：2012-07-24
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