发明申请
US20110169089A1 EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) INTEGRATED CIRCUIT WITH ON-CHIP RESISTORS AND METHOD OF FORMING THE SAME
有权
具有片上电阻的超薄半导体绝缘体（ETSOI）集成电路及其形成方法
- 专利标题： EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) INTEGRATED CIRCUIT WITH ON-CHIP RESISTORS AND METHOD OF FORMING THE SAME
- 专利标题（中）： 具有片上电阻的超薄半导体绝缘体（ETSOI）集成电路及其形成方法
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申请号： US12687273申请日： 2010-01-14
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公开(公告)号： US20110169089A1公开(公告)日： 2011-07-14
- 发明人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Ghavam G. Shahidi
- 申请人： Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/86
摘要：
An electrical device is provided that in one embodiment includes a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness of less than 10 nm. A semiconductor device having a raised source region and a raised drain region of a single crystal semiconductor material of a first conductivity is present on a first surface of the semiconductor layer. A resistor composed of the single crystal semiconductor material of the first conductivity is present on a second surface of the semiconductor layer. A method of forming the aforementioned electrical device is also provided.
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