发明申请
US20110171800A1 METHOD OF FORMING SEMICONDUCTOR DEVICES WITH BURIED GATE ELECTRODES AND DEVICES FORMED BY THE SAME
审中-公开
用铜基电极形成半导体器件的方法及其形成的器件
- 专利标题： METHOD OF FORMING SEMICONDUCTOR DEVICES WITH BURIED GATE ELECTRODES AND DEVICES FORMED BY THE SAME
- 专利标题（中）： 用铜基电极形成半导体器件的方法及其形成的器件
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申请号： US12944870申请日： 2010-11-12
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公开(公告)号： US20110171800A1公开(公告)日： 2011-07-14
- 发明人: Bongsoo Kim , Chul Lee , Deoksung Hwang , Sang-Bin Ahn
- 申请人： Bongsoo Kim , Chul Lee , Deoksung Hwang , Sang-Bin Ahn
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2010-0002347 20100111
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A polycrystalline semiconductor layer is formed on a cell active region and a peripheral active region of a substrate. A buried gate electrode is formed in the substrate in the cell active region at a level below the polycrystalline semiconductor layer after forming the polycrystalline semiconductor layer. A gate electrode is formed on the substrate in the peripheral active region from the polysilicon semiconductor layer after forming the buried gate electrode.
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