发明申请
- 专利标题： METAL GATE TRANSISTOR AND RESISTOR AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 金属栅极晶体管和电阻器及其制造方法
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申请号： US13072766申请日： 2011-03-27
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公开(公告)号： US20110171810A1公开(公告)日： 2011-07-14
- 发明人: Chih-Yu Tseng , Chien-Ting Lin , Kun-Szu Tseng , Cheng-Wen Fan , Victor-Chiang Liang
- 申请人： Chih-Yu Tseng , Chien-Ting Lin , Kun-Szu Tseng , Cheng-Wen Fan , Victor-Chiang Liang
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor.
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