- 专利标题: Release Strategies for Making Transferable Semiconductor Structures, Devices and Device Components
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申请号: US13071027申请日: 2011-03-24
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公开(公告)号: US20110171813A1公开(公告)日: 2011-07-14
- 发明人: John A. ROGERS , Ralph G. Nuzzo , Matthew Meitl , Heung Cho Ko , Jongseung Yoon , Etienne Menard , Alfred J. Baca
- 申请人: John A. ROGERS , Ralph G. Nuzzo , Matthew Meitl , Heung Cho Ko , Jongseung Yoon , Etienne Menard , Alfred J. Baca
- 申请人地址: US IL Urbana
- 专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人地址: US IL Urbana
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/20 ; H01L21/18
摘要:
Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.
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