Provided is a silicon carbide semiconductor device capable of lowering the contact resistance of an ohmic electrode and achieving high reverse breakdown voltage characteristics. A semiconductor device includes a substrate and a p+ region as an impurity layer. The substrate of the first conductive type (n type) is made of silicon carbide and has a dislocation density of 5×103 cm−2 or less. The p+ region is formed on the substrate, in which the concentration of the conductive impurities having the second conductive type different from the first conductive type is 1×1020 cm3 or more and 5×1021 cm3 or less.