发明申请
US20110175141A1 SEMICONDUCTOR DEVICES INCLUDING MOS TRANSISTORS HAVING AN OPTIMIZED CHANNEL REGION AND METHODS OF FABRICATING THE SAME
有权
包括具有优化的通道区域的MOS晶体管的半导体器件及其制造方法
- 专利标题： SEMICONDUCTOR DEVICES INCLUDING MOS TRANSISTORS HAVING AN OPTIMIZED CHANNEL REGION AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： 包括具有优化的通道区域的MOS晶体管的半导体器件及其制造方法
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申请号： US12964173申请日： 2010-12-09
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公开(公告)号： US20110175141A1公开(公告)日： 2011-07-21
- 发明人: Hajin LIM , Myungsun Kim , Hoi Sung Chung , Jinho Do , Weonhong Kim , Moonkyun Song , Dae-Kwon Joo
- 申请人： Hajin LIM , Myungsun Kim , Hoi Sung Chung , Jinho Do , Weonhong Kim , Moonkyun Song , Dae-Kwon Joo
- 优先权： KR10-2010-0004447 20100118
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L29/78 ; H01L21/20
摘要：
A semiconductor device, including a device isolation layer arranged on a predetermined region of a semiconductor substrate to define an active region, the active region including a central top surface of a (100) crystal plane and an inclined edge surface extending from the central top surface to the device isolation layer, a semiconductor pattern covering the central top surface and the inclined edge surface of the active region, the semiconductor pattern including a flat top surface of a (100) crystal plane that is parallel with the central top surface of the active region and a sidewall that is substantially perpendicular to the flat top surface, and a gate pattern overlapping the semiconductor pattern.
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